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BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1

MOSFET N-CH 100V 40A TSDSON

BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1

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Part No :

BSZ096N10LS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17044 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2025
PDF
BSZ096N10LS5ATMA1 PDF
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 50 V
FET Feature:Standard
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
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