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NVMFSW6D1N08HT1G

NVMFSW6D1N08HT1G

MOSFET N-CH 80V 17A/89A 5DFN

NVMFSW6D1N08HT1G

NVMFSW6D1N08HT1G

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Part No :

NVMFSW6D1N08HT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 17A/89A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
33000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:17A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2085 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NVMFSW6D1N08HT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFSW6D1N08HT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFSW6D1N08HT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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