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IPD65R950CFDATMA1

IPD65R950CFDATMA1

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Part No :

IPD65R950CFDATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 3.9A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPD65R950CFDATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:14.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 100 V
FET Feature:-
Power Dissipation (Max):36.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R950CFDATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD65R950CFDATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD65R950CFDATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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