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NVD5863NLT4G

NVD5863NLT4G

13A, 60V, 0.011OHM, N-CHANNEL,

NVD5863NLT4G

NVD5863NLT4G

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Part No :

NVD5863NLT4G

Manufacturer
Rochester Electronics
Description
13A, 60V, 0.011OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
233023 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:14.9A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.85 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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