N-CHANNEL AUTOMOTIVE MOSFET
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.3 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 188W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN63D8LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 380MA SOT323 |
|
DMT4008LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
SIHU5N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 4.4A TO251AA |
|
RM80N100T2Rectron USA |
MOSFET N-CH 100V 80A TO220-3 |
|
STS5N15F4STMicroelectronics |
MOSFET N-CH 150V 5A 8SO |
|
STH320N4F6-2STMicroelectronics |
MOSFET N-CH 40V 200A H2PAK |
|
SQJA37EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8 |
|
AUIRLS3034Rochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
IPD60R2K0PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3A TO252-3 |
|
XP262N7002TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 60V 300MA SOT23 |
|
IPP50R520CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 7.1A TO220-3-1 |
|
IRF7759L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 26A DIRECTFET |
|
UPA2825T1S-E2-ATRenesas Electronics America |
MOSFET N-CH 30V 8HVSON |