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IPI80N04S303AKSA1

IPI80N04S303AKSA1

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Part No :

IPI80N04S303AKSA1

Manufacturer
Rochester Electronics
Description
N-CHANNEL AUTOMOTIVE MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
164000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IPI80N04S303AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.3 pF @ 25 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI80N04S303AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI80N04S303AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI80N04S303AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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