MOSFET N CH 40V 160A I2PAK
Type | Description |
---|---|
Series: | DeepGATE™, STripFET™ VI |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.2mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF1324S-7PPBFRochester Electronics |
MOSFET N-CH 24V 240A D2PAK |
|
NTMFS5C450NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
IAUC100N04S6N022ATMA1IR (Infineon Technologies) |
IAUC100N04S6N022ATMA1 |
|
PSMN021-100YLXNexperia |
MOSFET N-CH 100V 49A LFPAK56 |
|
FDP10AN06A0Rochester Electronics |
MOSFET N-CH 60V 12A/75A TO220-3 |
|
MSC025SMA120BRoving Networks / Microchip Technology |
SICFET N-CH 1.2KV 103A TO247-3 |
|
DMS3014SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.4A 8SO |
|
FDMS86550ET60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A/245A POWER56 |
|
BSC050N03LSGXTRochester Electronics |
BSC050N03 - 12V-300V N-CHANNEL P |
|
2SK1283-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQAF19N60Rochester Electronics |
MOSFET N-CH 600V 11.2A TO3PF |
|
IRF7749L2TRPBFRochester Electronics |
IRF7749 - 12V-300V N-CHANNEL POW |
|
IRLR2905ZTRLPBFRochester Electronics |
MOSFET N-CH 55V 42A DPAK |