MOSFET N-CH 100V 120A D2PAK
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6860 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7E2R7-30B,127Rochester Electronics |
PFET, 75A I(D), 30V, 0.0027OHM, |
|
BUK9209-40B,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
IPD80R1K4CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 3.9A TO252-3 |
|
STD30N6LF6AGSTMicroelectronics |
MOSFET N-CH 60V 24A DPAK |
|
SIHA240N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220 |
|
RD3G400GNTLROHM Semiconductor |
MOSFET N-CH 40V 40A TO252 |
|
DMP6350SQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 1.5A SOT23 |
|
SIHB35N60E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 32A D2PAK |
|
STB34N50DM2AGSTMicroelectronics |
MOSFET N-CH 500V 26A D2PAK |
|
NTGS3136PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 6TSOP |
|
IRFB7746PBFRochester Electronics |
MOSFET N-CH 75V 59A TO220AB |
|
TP2502N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 20V 630MA TO243AA |
|
IPB80N04S2H4-ATMA2Rochester Electronics |
N-CHANNEL POWER MOSFET |