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SI8824EDB-T2-E1

SI8824EDB-T2-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8824EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 2.1A MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
83764 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
SI8824EDB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA
SI8824EDB-T2-E1 is available at GangBo-ic.com, Please review product page below for detailed information, including SI8824EDB-T2-E1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI8824EDB-T2-E1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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