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TSM061NA03CV RGG

TSM061NA03CV RGG

MOSFET N-CH 30V 66A 8PDFN

TSM061NA03CV RGG

TSM061NA03CV RGG

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Part No :

TSM061NA03CV RGG

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 30V 66A 8PDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
072607 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 13 - Feb 17 2025
PDF
TSM061NA03CV RGG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1136 pF @ 15 V
FET Feature:-
Power Dissipation (Max):44.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (3x3)
Package / Case:8-PowerWDFN
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