MOSFET P-CH 20V 4.4A TO236AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 36mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.1 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1820 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 490mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQ4850EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SO |
|
FCP4N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A TO220-3 |
|
STP315N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO220 |
|
RD3L03BATTL1ROHM Semiconductor |
PCH -60V -35A POWER MOSFET - RD3 |
|
IRF610Rochester Electronics |
3.3A 200V 1.500 OHM N-CHANNEL |
|
NTHS5402T1Rochester Electronics |
MOSFET N-CH 30V 4.9A CHIPFET |
|
IXFT44N50PWickmann / Littelfuse |
MOSFET N-CH 500V 44A TO268 |
|
IRLR024TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
SI7149DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
|
IPU95R1K2P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A TO251-3 |
|
SQP120P06-6M7L_GE3Vishay / Siliconix |
MOSFET P-CH 60V TO220AB |
|
SIR668ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 93.6A PPAK SO-8 |
|
IXFN220N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 160A SOT227B |