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IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1

MOSFET N-CH 60V 180A TO263-7

EFR32FG1P132F256GM32-C0

EFR32FG1P132F256GM32-C0

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IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1

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Part No :

IPB180N06S4H1ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
782278 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB180N06S4H1ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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