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FQPF3N80CYDTU

FQPF3N80CYDTU

MOSFET N-CH 800V 3A TO220F-3

FQPF3N80CYDTU

FQPF3N80CYDTU

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Part No :

FQPF3N80CYDTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 3A TO220F-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11570 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
PDF
FQPF3N80CYDTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:705 pF @ 25 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3 (Y-Forming)
Package / Case:TO-220-3 Full Pack, Formed Leads
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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