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IPP65R600C6XKSA1

IPP65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

IPP65R600C6XKSA1

IPP65R600C6XKSA1

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Part No :

IPP65R600C6XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 7.3A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
355350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
PDF
IPP65R600C6XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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