MOSFET N-CH 600V 60A MAX247
Type | Description |
---|---|
Series: | MDmesh™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 55mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 266 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 7300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 560W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | MAX247™ |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD60R3K4CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 2.6A TO252-3 |
|
IXTH8P50Wickmann / Littelfuse |
MOSFET P-CH 500V 8A TO247 |
|
SFT1446-TL-HRochester Electronics |
MOSFET N-CH 60V 20A TP-FA |
|
IPB80P04P405ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SQJA64EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
|
IPA65R190E6XKSA1Rochester Electronics |
PFET, 650V, 0.19OHM, 1-ELEMENT, |
|
SPB08N03LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL3803VPBFRochester Electronics |
IRL3803 - 12V-300V N-CHANNEL POW |
|
SIJA58ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 32.3A/109A PPAK |
|
IXFX24N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 24A PLUS247-3 |
|
STI16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A I2PAK |
|
STF14NM50NSTMicroelectronics |
MOSFET N-CH 500V 12A TO220FP |
|
AON7292Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 9A/23A 8DFN |