CAP CER 0.056UF 10V C0G/NP0 2220
MOSFET N-CH 80V 120A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 139 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9961 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 338W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PHP27NQ11T,127Nexperia |
MOSFET N-CH 110V 27.6A TO220AB |
|
IGOT60R070D1AUMA1IR (Infineon Technologies) |
GANFET N-CH 600V 31A 20DSO |
|
IPB083N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A D2PAK |
|
FDN335NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 1.7A SUPERSOT3 |
|
AOWF14N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 14A TO262F |
|
IPP65R280E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJQ100E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
BUK7108-40AIE,118Rochester Electronics |
PFET, 75A I(D), 40V, 0.008OHM, 1 |
|
PH2625L,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
STW36NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO247 |
|
IPW60R024CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 77A TO247-3-41 |
|
AO7414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 2A SC70-3 |
|
IXTA06N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 600MA TO263 |