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ERJ-U0XF4220Y

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IRLS3813PBF

IRLS3813PBF

MOSFET N-CH 30V 160A D2PAK

IRLS3813PBF

IRLS3813PBF

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Part No :

IRLS3813PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 160A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
981998 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRLS3813PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95mOhm @ 148A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.02 pF @ 25 V
FET Feature:-
Power Dissipation (Max):195W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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