TVS DIODE 180V 354V CASE 5A
TRANS NPN 80V 10A TO-3
MOSFET P-CH 60V 5.1A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS4709NT1GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2625ALSRochester Electronics |
MOSFET N-CH 600V 4.4A TO220FI |
|
STF10NM50NSTMicroelectronics |
MOSFET N-CH 500V 7A TO220FP |
|
SSM6J503NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6UDFNB |
|
BSP135H6906XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
SSM3J35MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 100MA VESM |
|
DMTH6009SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXFT180N20X3HVWickmann / Littelfuse |
MOSFET N-CH 200V 180A TO268HV |
|
IPP16CN10NGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
AOWF12N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO262F |
|
NTP011N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.8/74.3A TO220 |
|
IPA057N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 60A TO220-FP |
|
BSS138-TPMicro Commercial Components (MCC) |
MOSFET N-CH 50V 220MA SOT23 |