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SI5414DC-T1-GE3

SI5414DC-T1-GE3

MOSFET N-CH 20V 6A 1206-8

678-125-3JU6I

678-125-3JU6I

CRYSTAL

SI5414DC-T1-GE3

SI5414DC-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI5414DC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 6A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
691869 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI5414DC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:17mOhm @ 9.9A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 6.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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