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FDB12N50TM

FDB12N50TM

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Part No :

FDB12N50TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 500V 11.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10843 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FDB12N50TM PDF
Type Description
Series:UniFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 25 V
FET Feature:-
Power Dissipation (Max):165W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB12N50TM is available at GangBo-ic.com, Please review product page below for detailed information, including FDB12N50TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDB12N50TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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