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FDFM2N111

FDFM2N111

MOSFET N-CH 20V 4A MICROFET

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AE326SC8AN

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FDFM2N111

FDFM2N111

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Part No :

FDFM2N111

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 4A MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22145 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
FDFM2N111 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:273 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MicroFET 3x3mm
Package / Case:6-WDFN Exposed Pad
FDFM2N111 is available at GangBo-ic.com, Please review product page below for detailed information, including FDFM2N111 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFM2N111 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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