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IPB050N06NGATMA1

IPB050N06NGATMA1

MOSFET N-CH 60V 100A D2PAK

IPB050N06NGATMA1

IPB050N06NGATMA1

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Part No :

IPB050N06NGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 100A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18615 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 12 - Mar 16 2025
PDF
IPB050N06NGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.1 pF @ 30 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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