MOSFET N-CH 600V 4A TO252
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.8Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 65W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LSIC1MO120E0080Wickmann / Littelfuse |
SICFET N-CH 1200V 39A TO247-3 |
|
VS-FA72SA50LCVishay General Semiconductor – Diodes Division |
MOSFET N-CH 500V 72A SOT-227 |
|
FCP260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A TO220-3 |
|
SIHP6N40D-E3Vishay / Siliconix |
MOSFET N-CH 400V 6A TO220AB |
|
FQPF9N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 8.8A TO220F |
|
PMPB08R5XNXNexperia |
PMPB08R5XN/SOT1220-2/DFN2020M- |
|
NVMFS5C468NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/37A 5DFN |
|
PMN27XPE115Rochester Electronics |
SMALL SIGNAL FET |
|
SISHA04DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.9A/40A PPAK |
|
FQP12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11.5A TO220-3 |
|
IPZ65R065C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A TO247-4 |
|
FQD1N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1A DPAK |
|
SQJ146ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 74A PPAK SO-8 |