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RES 246 OHM 0.05% 1/8W 0805

IPI111N15N3GAKSA1

IPI111N15N3GAKSA1

MOSFET N-CH 150V 83A TO262-3

IPI111N15N3GAKSA1

IPI111N15N3GAKSA1

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Part No :

IPI111N15N3GAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 83A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
101610 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPI111N15N3GAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:11.1mOhm @ 83A, 10V
Vgs(th) (Max) @ Id:4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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