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SCT3120ALGC11

SCT3120ALGC11

SICFET N-CH 650V 21A TO247N

SCT3120ALGC11

SCT3120ALGC11

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Part No :

SCT3120ALGC11

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 650V 21A TO247N
Catalog
Transistors - FETs, MOSFETs - Single
Availability
601560 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 08 - Mar 12 2025
PDF
SCT3120ALGC11 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id:5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 18 V
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 500 V
FET Feature:-
Power Dissipation (Max):103W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247N
Package / Case:TO-247-3
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