SICFET N-CH 650V 21A TO247N
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 156mOhm @ 6.7A, 18V |
Vgs(th) (Max) @ Id: | 5.6V @ 3.33mA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 18 V |
Vgs (Max): | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 460 pF @ 500 V |
FET Feature: | - |
Power Dissipation (Max): | 103W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247N |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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