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BSM180C12P2E202

BSM180C12P2E202

SICFET N-CH 1200V 204A MODULE

BSM180C12P2E202

BSM180C12P2E202

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Part No :

BSM180C12P2E202

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1200V 204A MODULE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
361536 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:20000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1360W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module
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