MOSFET P-CH 40V 80A TO262-3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, OptiMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.2mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 151 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10.3 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3-1 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
RXR035N03TCLROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT3 |
![]() |
NX138BKVLNexperia |
MOSFET N-CH 60V 265MA TO236AB |
![]() |
IPB017N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
![]() |
R6042JNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 42A TO247G |
![]() |
IPI180N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO262-3 |
![]() |
FQB34N20TMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TSM4N90CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 900V 4A TO220 |
![]() |
IXFP14N85XMWickmann / Littelfuse |
MOSFET N-CHANNEL 850V 14A TO220 |
![]() |
BUK7514-60E,127Rochester Electronics |
MOSFET N-CH 60V 58A TO220AB |
![]() |
STU7LN80K5STMicroelectronics |
MOSFET N-CH 800V 5A IPAK |
![]() |
SQJ476EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 23A PPAK SO-8 |
![]() |
DMP2018LFK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 9.2A 6UDFN |
![]() |
VN0104N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |