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SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

MOSFET N-CH 150V 24.5A PPAK SO-8

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SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

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Part No :

SQJ872EP-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 150V 24.5A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19017 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SQJ872EP-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:35.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1045 pF @ 25 V
FET Feature:-
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:8-PowerTDFN
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