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BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1

MOSFET N-CH 25V 170A 2WDSON

3319/14 100

3319/14 100

CBL RIBN 14COND 0.050 BLACK 100'

BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSB012NE2LXIXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 170A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
611361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSB012NE2LXIXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5852 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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