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AUIRL7766M2TR

AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET

AUIRL7766M2TR

AUIRL7766M2TR

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Part No :

AUIRL7766M2TR

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 10A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10751 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
AUIRL7766M2TR PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5.305 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ M4
Package / Case:DirectFET™ Isometric M4
AUIRL7766M2TR is available at GangBo-ic.com, Please review product page below for detailed information, including AUIRL7766M2TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for AUIRL7766M2TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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