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BSZ039N06NSATMA1

BSZ039N06NSATMA1

MOSFET N-CH 60V 18A/40A TSDSON

BSZ039N06NSATMA1

BSZ039N06NSATMA1

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Part No :

BSZ039N06NSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 18A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
081208 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
BSZ039N06NSATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ039N06NSATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ039N06NSATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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