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SI8429DB-T1-E1

SI8429DB-T1-E1

MOSFET P-CH 8V 11.7A 4MICROFOOT

80950

80950

FRAME,ECONOMY,HACK SAW

SI8429DB-T1-E1

SI8429DB-T1-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8429DB-T1-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 11.7A 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11970 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SI8429DB-T1-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 4 V
FET Feature:-
Power Dissipation (Max):2.77W (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA, CSPBGA
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