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IRFH6200TRPBF

IRFH6200TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRFH6200TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 49A/100A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
540954 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFH6200TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:10890 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
IRFH6200TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH6200TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH6200TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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