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2SK4066-1E

2SK4066-1E

MOSFET N-CH 60V 100A TO262-3

2SK4066-1E

2SK4066-1E

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Part No :

2SK4066-1E

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14649 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
2SK4066-1E PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12500 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.65W (Ta), 90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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