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BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

MOSFET N-CH 100V 63A TDSON-8-1

KIT-13205

KIT-13205

INVENTOR KIT FOR MICROVIEW ARD

BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC109N10NS3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 63A TDSON-8-1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
35164 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
BSC109N10NS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:10.9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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