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IPD75N04S406ATMA1

IPD75N04S406ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD75N04S406ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 75A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
170817 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 11 - Apr 15 2025
PDF
IPD75N04S406ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD75N04S406ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD75N04S406ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD75N04S406ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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