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FQP8N90C

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FQP8N90C

FQP8N90C

Image is for reference, please contact us to get the real picture

Part No :

FQP8N90C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 6.3A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13735 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
FQP8N90C PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.08 pF @ 25 V
FET Feature:-
Power Dissipation (Max):171W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP8N90C is available at GangBo-ic.com, Please review product page below for detailed information, including FQP8N90C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP8N90C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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