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RM210N75HD

RM210N75HD

MOSFET N-CH 75V 210A TO263-2

RM210N75HD

RM210N75HD

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Part No :

RM210N75HD

Manufacturer
Rectron USA
Description
MOSFET N-CH 75V 210A TO263-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
860586 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RM210N75HD is available at GangBo-ic.com, Please review product page below for detailed information, including RM210N75HD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM210N75HD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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