MOSFET N-CH 600V 72.8A TO247-3
Type | Description |
---|---|
Series: | SupreMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 72.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 38mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 300 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 11045 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 543W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRFR9110TRPBFVishay / Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
![]() |
IRFR430ATRPBFVishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
![]() |
AUIRFS3107-7PRochester Electronics |
MOSFET N-CH 75V 240A D2PAK |
![]() |
IRF1010ZSPBFRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
![]() |
SIHB35N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 32A D2PAK |
![]() |
NDT456PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 7.5A SOT-223-4 |
![]() |
FDS7766Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
RW1E014SNT2RROHM Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6 |
![]() |
2SJ328-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
FDMS86381-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 30A POWER56 |
![]() |
MCAC53N06Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 53A DFN5060 |
![]() |
2SK3821-ERochester Electronics |
MOSFET N-CH 100V 40A SMP |
![]() |
BSS84PWH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 150MA SOT323-3 |