MOSFET P-CH 30V 5A 8SO
Type | Description |
---|---|
Series: | DeepGATE™, STripFET™ H6 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 56mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 639 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.7W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RSD200N05TLROHM Semiconductor |
MOSFET N-CH 45V 20A CPT3 |
|
FDD86380-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 50A DPAK |
|
MAX8704EUBRochester Electronics |
LOW-VOLTAGE LINEAR REGULATOR |
|
SCT20N120HSTMicroelectronics |
SICFET N-CH 1200V 20A H2PAK-2 |
|
RM18P100HDERectron USA |
MOSFET P-CH 100V 18A TO263-2 |
|
EPC2218EPC |
GANFET N-CH 100V DIE |
|
IPI60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO262-3 |
|
PSMN5R8-30LL,115Rochester Electronics |
MOSFET N-CH 30V 40A 8DFN |
|
MCH6431-P-TL-HRochester Electronics |
MOSFET N-CH 30V 5A MCPH6 |
|
STD3NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 2.5A DPAK |
|
IXFQ50N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 50A TO3P |
|
IRLR024TRPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
STB30NF10T4STMicroelectronics |
MOSFET N-CH 100V 35A D2PAK |