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IPB80N04S303ATMA1

IPB80N04S303ATMA1

MOSFET N-CH 40V 80A TO263-3

IPB80N04S303ATMA1

IPB80N04S303ATMA1

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Part No :

IPB80N04S303ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
840384 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPB80N04S303ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N04S303ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N04S303ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N04S303ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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