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IAUZ18N10S5L420ATMA1

IAUZ18N10S5L420ATMA1

MOSFET N-CH 100V 18A TSDSON-8-32

IAUZ18N10S5L420ATMA1

IAUZ18N10S5L420ATMA1

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Part No :

IAUZ18N10S5L420ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 18A TSDSON-8-32
Catalog
Transistors - FETs, MOSFETs - Single
Availability
300230 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 50 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-32
Package / Case:8-PowerTDFN
IAUZ18N10S5L420ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUZ18N10S5L420ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUZ18N10S5L420ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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