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IRFR3711TRLPBF

IRFR3711TRLPBF

HEXFET N-CHANNEL POWER MOSFET

IRFR3711TRLPBF

IRFR3711TRLPBF

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Part No :

IRFR3711TRLPBF

Manufacturer
Rochester Electronics
Description
HEXFET N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11417 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
PDF
IRFR3711TRLPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.98 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3711TRLPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR3711TRLPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR3711TRLPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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