CAP CER 0.082UF 50V X7R 2220
MOSFET N-CH 500V 98A TO264AA
Type | Description |
---|---|
Series: | HiPerFET™, Polar3™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 197 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 13100 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264AA (IXFK) |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSZ097N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 12A/40A 8TSDSON |
|
SI4423DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 10A 8SO |
|
UPA652TT-E1-ARochester Electronics |
MOSFET P-CH 20V 2A 6WSOF |
|
IPW60R165CPRochester Electronics |
21A, 600V, 0.165OHM, N-CHANNEL M |
|
BSS84,215Nexperia |
MOSFET P-CH 50V 130MA TO236AB |
|
FDS8813NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.5A 8SOIC |
|
SIHG44N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 46A TO247AC |
|
IXFH10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO247AD |
|
TK5A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 5A TO220SIS |
|
FDB075N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 130A D2PAK |
|
TK750A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
STL140N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
IXTH24N50Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO247 |