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GAN063-650WSAQ

GAN063-650WSAQ

GANFET N-CH 650V 34.5A TO247-3

GAN063-650WSAQ

GAN063-650WSAQ

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Part No :

GAN063-650WSAQ

Manufacturer
Nexperia
Description
GANFET N-CH 650V 34.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10166 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):143W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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