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IPB65R420CFDATMA1

IPB65R420CFDATMA1

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Part No :

IPB65R420CFDATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 8.7A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
419941 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 20 - Mar 24 2025
PDF
IPB65R420CFDATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R420CFDATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB65R420CFDATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB65R420CFDATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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