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SI2319DS-T1-GE3

SI2319DS-T1-GE3

MOSFET P-CH 40V 2.3A SOT23-3

FFSD-25-D-28.00-01-N-D24

FFSD-25-D-28.00-01-N-D24

.050 X .050 C.L. FEMALE IDC ASSE

SI2319DS-T1-GE3

SI2319DS-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI2319DS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 40V 2.3A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10121 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI2319DS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 20 V
FET Feature:-
Power Dissipation (Max):750mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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