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IPW65R095C7XKSA1

IPW65R095C7XKSA1

MOSFET N-CH 650V 24A TO247

IPW65R095C7XKSA1

IPW65R095C7XKSA1

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Part No :

IPW65R095C7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 24A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10155 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
PDF
IPW65R095C7XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2140 pF @ 400 V
FET Feature:-
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247
Package / Case:TO-247-3
IPW65R095C7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R095C7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R095C7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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