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SQM50P08-25L_GE3

SQM50P08-25L_GE3

MOSFET P-CHANNEL 80V 50A TO263

IDSS-28-D-03.00-G

IDSS-28-D-03.00-G

INSULATION DISPLACEMENT SOCKET C

SQM50P08-25L_GE3

SQM50P08-25L_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQM50P08-25L_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CHANNEL 80V 50A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14639 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SQM50P08-25L_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:137 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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