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IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

MOSFET N-CH 650V 12A TO252-3

IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

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Part No :

IPD60R280PFD7SAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 12A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12465 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
Type Description
Series:CoolMOS™PFD7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:656 pF @ 400 V
FET Feature:-
Power Dissipation (Max):51W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-344
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R280PFD7SAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD60R280PFD7SAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD60R280PFD7SAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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