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IPS65R1K4C6

IPS65R1K4C6

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Part No :

IPS65R1K4C6

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 3.2A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
869386 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
IPS65R1K4C6 is available at GangBo-ic.com, Please review product page below for detailed information, including IPS65R1K4C6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPS65R1K4C6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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